Coherent backscattering of Raman light

Year: 2017

Authors: Fazio B., Irrera A., Pirotta S., D\’Andrea C., Del Sorbo S., Josè Lo Faro M., Gucciardi P.G., Iatì M.A., Saija R., Patrini M., Musumeci P., Salvatore Vasi C., Wiersma D.S., Galli M., Priolo F.

Autors Affiliation: CNR-IPCF, viale F. Stagno d\’Alcontres 37, Faro-Superiore-Messina, 98158, Italy; Dipartimento di Fisica, Università degli Studi di Pavia, via Bassi 6, Pavia, 27100, Italy; MATIS IMM-CNR, via S. Sofia, 64, Catania, 95123, Italy; CSFNSM, Viale A. Doria, 6, Catania, 95125, Italy; LENS, Università di Firenze, via Nello Carrara, 1, Sesto Fiorentino, Firenze, 50019, Italy; Dipartimento di Fisica e Astronomia, Largo Enrico Fermi, 2, Firenze, 50125, Italy; INRIM-Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce 91, Torino, 10135, Italy; Scuola Superiore di Catania, Università di Catania, via Valdisavoia, 9, Catania, 95123, Italy; CNR-IFAC, via Madonna del Piano 10, Sesto Fiorentino, Firenze, I-50019, Italy

Abstract: Coherent backscattering of light is observed when electromagnetic waves undergo multiple scattering within a disordered optical medium. So far, coherent backscattering of light has been studied extensively for elastic (or Rayleigh) light scattering. The occurrence of inelastic scattering affects the visibility of the backscattering effect by reducing the degree of optical coherence in the diffusion process. Here, we discuss the first experimental observation of a constructive interference effect in the inelastically backscattered Raman radiation from strongly diffusing silicon nanowire random media. The observed phenomenon originates from the coherent nature of the Raman scattering process, which typically occurs on a scale given by the phonon coherence length. We interpret our results in the context of a theoretical model of mixed Rayleigh-Raman random walks to shed light on the role of phase coherence in multiple scattering phenomena.


Volume: 11 (3)      Pages from: 170  to: 176

KeyWords: Backscattering; Electromagnetic waves; Inelastic scattering; Light scattering; Multiple scattering; Random processes, Coherence lengths; Coherent backscattering; Constructive interference; Diffusion process; Phase coherence; Scattering process; Silicon nanowires; Theoretical modeling, Coherent scattering
DOI: 10.1038/NPHOTON.2016.278

Citations: 35
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