The effect of B-doping on the electrical conductivity of polymer-derived Si(B)OC ceramics

Year: 2017

Authors: Sorarù G. D., Kacha G., Campostrini R., Ponzoni A., Donarelli M., Kumar A., Mariotto G.

Autors Affiliation: Dipartimento di Ingegneria Industriale, Università di Trento, Trento, Italy; SENSOR Lab, CNR, National Institute of Optics (INO), Brescia, Italy; SENSOR Lab, Department of Information Engineering, University of Brescia, Brescia, Italy; Graduate Course on Nanosciences and Advanced Technologies, Università di Verona, Verona, Italy; Raman Micro Spectroscopy Laboratory (Lab-Ram), Università di Verona, Verona, Italy; Dipartimento di Informatica, Università di Verona, Verona, Italy

Abstract: In this work the room temperature electrical conductivity of Si(B)OC glasses made via polymer pyrolysis at 1200 degrees C and 1400 degrees C (maximum temperature) and having different amount of boron was measured. When B content is increased from zero (pure SiOC glass) up to B/Si=0.5 the electrical conductivity increases in 2 orders of magnitude from 4.09 +/- 0.64910(-5) up to 2.93 +/- 1.91910(-3) with a corresponding decrease in the activation energy from about 1.08 to 0.51 eV. This results shows for the first time that the electrical conductivity of Si-based polymer-derived ceramics can be controlled by the amount of the doping element. The structure of the Si(B) OC glasses has been studied with different techniques including FT-IR, XRD and Raman spectroscopy. The Raman study indicates that B partially substitutes C into the sp(2) C planes of the free carbon phase forming trigonal BC3 units. Accordingly, the evolution of the electrical properties with the B content has been correlated with the corresponding structural evolution and a hypothesis is presented to rationalize the role of boron on the electrical conductivity of SiOBC glasses.


Volume: 100 (10)      Pages from: 4611  to: 4621

More Information: National Research Council, CNR, (Italy); Lombardia Region (Italy)
KeyWords: electrical conductivity, polymer derived ceramics, Raman spectroscopy, SiBOC
DOI: 10.1111/jace.14986

Citations: 14
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