Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode

Year: 2015

Authors: Baratto C., Kumar R., Comini E., Faglia G., Sberveglieri G.

Autors Affiliation: CNR-INO SENSOR Lab. & University of Brescia, Dept. of Information Engineering, Via Branze 45, 25133 Brescia,

Abstract: In the current paper we apply catalyst assisted vapour phase growth technique to grow ZnO nanowires (ZnO nws) on p-GaN thin film obtaining EL emission in reverse bias regime. ZnO based LED represents a promising alternative to III-nitride LEDs, as in free devices: the potential is in near-UV emission and visible emission. For ZnO, the use of nanowires ensures good crystallinity of the ZnO, and improved light extraction from the interface when the nanowires are vertically aligned. We prepared ZnO nanowires in a tubular furnace on GaN templates and characterized the p-n ZnO nws/GaN heterojunction for LED applications. SEM microscopy was used to study the growth of nanowires and device preparation. Photoluminescence (PL) and Electroluminescence (EL) spectroscopies were used to characterize the heterojunction, showing that good quality of PL emission is observed from nanowires and visible emission from the junction can be obtained from the region near ZnO contact, starting from onset bias of 6V. (C) 2015 Optical Society of America

Journal/Review: OPTICS EXPRESS

Volume: 23 (15)      Pages from: 18937  to: 18942

More Information: We would like to thank the group of late Prof. B K Meyer from University of Giessen for lithography and ion beam etching and OSRAM Opto Semiconductors for GaN substrates. The research leading to these results has received funding from the European Communities 7th Framework Programme under grant agreement NMP3-LA-2010-246334. The financial support of the European Commission is therefore gratefully acknowledged.
DOI: 10.1364/OE.23.018937

Citations: 14
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