Few layered MoS2 lithography with an AFM tip: description of the technique and nanospectroscopy investigations
Year: 2015
Authors: Donarelli M., Perrozzi F., Bisti F., Paparella F., Feyer V., Ponzoni A., Gonchigsuren M., Ottaviano L.
Autors Affiliation: Univ Aquila, Dept Phys & Chem Sci, I-67100 Laquila, Italy; NanoESCA Beamline, Sincrotrone Trieste SCpA, I-34012 Trieste, Italy; CNR INO Brescia, I-25123 Brescia, Italy; MUST, Sch Appl Sci, Bagatoiruu 14191, Ulaanbaatar, Mongolia; UOS LAquila, CNR SPIN, I-67100 Laquila, Italy.
Abstract: A novel technique to lithograph the MoS2 surface is described here. Mechanically exfoliated MoS2 flakes have been patterned with an atomic force microscope tip. After the patterning process, the lithographed areas have been removed by selective chemical etching. The electronic properties of the MoS2 flakes have been analyzed with spatially resolved photoelectron spectroscopy, with tunable incident photon energy, provided by a synchrotron light source. Tens of meV core level shifts can be recorded in relation to the flakes edges, coming from both the exfoliation and from the lithography.
Journal/Review: NANOSCALE
Volume: 7 (26) Pages from: 11453 to: 11459
KeyWords: Active Edge Sites; Force Microscopy; Local Oxidation; Silicon Surfaces; EvolutionDOI: 10.1039/c5nr02337hImpactFactor: 7.760Citations: 23data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2024-10-13References taken from IsiWeb of Knowledge: (subscribers only)Connecting to view paper tab on IsiWeb: Click hereConnecting to view citations from IsiWeb: Click here