Scientific Results

Deep level traps in Se-doped MOCVD AlxGa1-xAs

Year: 1987

Authors: HANNA M.C., OH E.G., SZMYD D.M., LUCCHESINI A., MAJERFELD A.

Autors Affiliation: University of Colorado at Boulder, Boulder, CO USA

Journal/Review:

KeyWords: impurity and defect levels; III-V semiconductors;