Atomic lithography with barium atoms
Authors: Fioretti A., Camposeo A., Tantussi F., Arimondo E., Gozzini S., Gabbanini C.
Autors Affiliation: CNR, Ist Proc Chim Fis, I-56124 Pisa, Italy; Univ Pisa, INFM, Dipartimento Fis E Fermi, Pisa
Abstract: We present the formation of structures created by barium atoms using a lithographic technique. The interaction of barium atoms with the resist, followed by an etching process, creates well defined structures with features below 100 nm. The interaction of the ground state of Ba atoms with the molecules forming the self-assembled monolayer (SAM) is compared with the metastable Ba atoms-SAM interaction. The results show that metastable atoms require a lower Ba dose per SAM molecule to damage the resist, therefore increasing the efficiency of the process. (c) 2005 Elsevier B.V. All rights reserved.
Journal/Review: APPLIED SURFACE SCIENCE
Volume: 248 (1-4) Pages from: 196 to: 199
KeyWords: lithographyDOI: 10.1016/j.apsusc.2005.03.001Citations: 14data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2021-12-05References taken from IsiWeb of Knowledge: (subscribers only)Connecting to view paper tab on IsiWeb: Click hereConnecting to view citations from IsiWeb: Click here