Pressure broadening in the second overtone of NO, measured with a near infrared DFB diode laser

Year: 1999

Authors: Snels M., Corsi C., D’Amato F., De Rosa M., Modugno G.

Autors Affiliation: LENS – Europ. Lab. Nonlinear S., Sezione di Firenze, Largo Enrico Fermi 2, I-50125 Florence, Italy; Istituto Materiali Speciali, Consiglio Nazionale delle Ricerche, Zona Industriale, I-85050 Tito Scalo (PZ), Italy; Dipartimento Scienze Neurologiche, Università di Firenze, Viale Morgagni 85, I-50134 Florence, Italy; Dipartimento INN, Divisione Fisica Applicata, CR-Frascati, C.P. 65, I-00044 Frascati, Italy; SIT Srl, Via Masaccio 116, I-50100 Florence, Italy; Scuola Normale Superiore, Piazza dei Cavalieri 6, I-56126 Pisa, Italy

Abstract: Fundamental spectroscopical parameters of the second overtone band (3 <-- 0) of NO are reported using a high resolution, direct absorption spectrometer, based on a distributed feedback diode laser emitting at 1.8 mu m. Line intensity, self- and nitrogen-line broadening coefficients have been measured with high accuracy in the second overtone of NO, far 7 groups of lines belonging to the R branch, from R(6.5) up to R(13.5) of the two electronic states (2)Pi(1/2) and (2)Pi(3/2). The results for this band have been compared with available data on the fundamental band and the first overtone. (C) 1999 Elsevier Science B.V. All rights reserved. Journal/Review: OPTICS COMMUNICATIONS (PRINT)

Volume: 159 (1-3)      Pages from: 80  to: 83

KeyWords: Distributed feedback lasers; Electron energy levels; Light absorption; Light emission; Molecular spectroscopy; Nitrogen oxides; Parametric amplifiers; Spectrometers, Pressure broadening, Semiconductor lasers
DOI: 10.1016/S0030-4018(98)00581-1

Citations: 10
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