Correlation between morphology and field-effect-transistor mobility in tetracene thin films
Year: 2005
Authors: Cicoira F., Santato C., Dinelli F., Loi M.A., Murgia M., Zamboni R., Biscarini F., Heremans P., Muccini M.
Autors Affiliation: Consiglio Nazionale Delle Ricerche, Ist. Stud. dei Mat. Nanostrutturati, Sezione di Bologna, Via Cobetti 101, I-40129 Bologna, Italy; IMEC, Kapeldreef 75, B-3001 Leuven, Belgium; Katholieke Universiteit Leuven, Electrical Engineering Department, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
Abstract: The growth of vacuum-sublimed tetracene thin films on silicon dioxide has been investigated from the early stages of the process. The effects of deposition flux and substrate silanization on film morphology and electrical properties have been explored. Tetracene shows an island growth, resulting in films with a granular structure. Both an increase in the deposition flux and the substrate silanization determine a decrease of the grain size and an improvement of the connectivity of the film in direct contact with the substrate. The hole mobility in field-effect transistors based on tetracene thin films, which also generate electroluminescence, increases with the deposition flux and values as high as 0.15 cm(2) V(-1) s(-1) are obtained.
Journal/Review: ADVANCED FUNCTIONAL MATERIALS
Volume: 15 (3) Pages from: 375 to: 380
KeyWords: ELECTRICAL CHARACTERISTICS; PENTACENE; GROWTH; TRANSPORT; CRYSTALS; POLYMERDOI: 10.1002/adfm.200400278ImpactFactor: 6.770Citations: 114data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2024-09-29References taken from IsiWeb of Knowledge: (subscribers only)Connecting to view paper tab on IsiWeb: Click hereConnecting to view citations from IsiWeb: Click here