Excess heat capacity in NTD Ge thermistors

Year: 2006

Authors: Olivieri E., Barucci M., Beeman J., Risegari L., Ventura G.

Autors Affiliation: Department of Physics, University of Florence, INFN, Florence, Italy; Lawrence Berkeley National Laboratory, University of California, Berkeley, CA, United States; Department of Mechanics, University of Florence, INFN, Florence, Italy

Abstract: Neutron Transmutation Doped (NTD) germanium thermistors, cut from metallized wafers, are useful in bolometry. The rise time of a bolometer depends on its heat capacity. We report measurements on the heat capacity of two NTD Ge wafers down to 24 mK temperatures. Both wafers were neutron irradiated and annealed, one of them had in addition undergone a boron implantation and metallization process. For the non-metallized wafer we found a Sommerfeld constant ? = 7.52 · 10-7 J K-2 cm-3. A comparison between the two wafers showed an excess heat capacity in the metallized wafer. For example, at 24 mK temperature, the specific heat of the metallized afer is more than twice the value of the non-metallized one.


Volume: 143 (3-4)      Pages from: 153  to: 162

KeyWords: Bolometers; Cryogenics; Neutrons; Semiconducting germanium; Specific heat; Thermal variables measurement, Bolometry; Germanium thermistors; Metallized wafers; Neutron transmutation doped (NTD), Thermistors
DOI: 10.1007/s10909-006-9214-8

Citations: 9
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