X-ray mask making by EBL and Monte Carlo analysis of a single-resist layer process on low-Z membrane.
Year: 1989
Authors: Gentili M., Lucchesini A., Lugli P., Messina G., Paoletti A., Santangelo S., Tucciarone A., Petrocco G.
Autors Affiliation: IESS – CNR – Roma – Italy
(1)Dipartimento di Ingegneria Meccanica, Universit� Roma II – Roma – Italy;
(2)Facolt� di Ingegneria dell’Universit� – Reggio Calabria – ltalia.
Abstract: X-ray masks are fabricated utilizing a single-resist layer process and boron nitride (BN) substrate. Final absorber structures are obtained by Au electroplating after e-beam patterning at 20 and 30 keV electron energy. Great improvement is observed, going from 20 to 30 keV, and high resolution structures were written down to 0.2 �m. The results are analyzed in terms of Monte Carlo simulation and the proximity function. At 20 keV, a remarkable contribution to back-scattering is found from the 200 � Au plating base, which drops dramatically at 30 keV.
Journal/Review: MICROELECTRONIC ENGINEERING
Volume: 9 Pages from: 147 to: 150
More Information: doi: 10.1016/0167-9317(89)90034-8
KeyWords: X-ray; Monte Carlo; electron beam lithography; electroplating; lift-off
DOI: 10.1016/0167-9317(89)90034-8