Electrical characteristics of heavily doped NTD Ge at very low temperatures
Anno: 2005
Autori: Barucci M., Beeman J., Olivieri E., Pasca E., Risegari L., Ventura G.
Affiliazione autori: INFN, Section of Florence, Florence, Italy; Department of Physics, University of Florence, Florence, Italy; Department of Mechanics, University of Florence, Florence, Italy; Lawrence Berkeley National Laboratory, University of California, Berkeley, United States
Abstract: We report about the measurement of the electric characteristics of some NTD Ge thermistors at temperatures down to 25 mK. The dopant concentration is around 6×1016cm-3, producing a material of characteristics close to the metal-to-insulator transition. Fitting the ?(T) characteristics with a variable exponent p Mott\’s law, a p around 0.6 was obtained. This result confirms the hypothesis of a dependence of p on the doping level.
Giornale/Rivista: PHYSICA B-CONDENSED MATTER
Volume: 368 (1-4) Da Pagina: 139 A: 142
Parole chiavi: Dopant concentration; Electrical characteristics; Low temperature thermistors, Cryogenics; Materials science; Metal insulator transition; Semiconducting germanium; Semiconductor doping, ThermistorsDOI: 10.1016/j.physb.2005.07.008Citazioni: 6dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2025-02-09Riferimenti tratti da Isi Web of Knowledge: (solo abbonati) Link per visualizzare la scheda su IsiWeb: Clicca quiLink per visualizzare la citazioni su IsiWeb: Clicca qui