Correlation between morphology and field-effect-transistor mobility in tetracene thin films
Anno: 2005
Autori: Cicoira F., Santato C., Dinelli F., Loi M.A., Murgia M., Zamboni R., Biscarini F., Heremans P., Muccini M.
Affiliazione autori: Consiglio Nazionale Delle Ricerche, Ist. Stud. dei Mat. Nanostrutturati, Sezione di Bologna, Via Cobetti 101, I-40129 Bologna, Italy; IMEC, Kapeldreef 75, B-3001 Leuven, Belgium; Katholieke Universiteit Leuven, Electrical Engineering Department, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
Abstract: The growth of vacuum-sublimed tetracene thin films on silicon dioxide has been investigated from the early stages of the process. The effects of deposition flux and substrate silanization on film morphology and electrical properties have been explored. Tetracene shows an island growth, resulting in films with a granular structure. Both an increase in the deposition flux and the substrate silanization determine a decrease of the grain size and an improvement of the connectivity of the film in direct contact with the substrate. The hole mobility in field-effect transistors based on tetracene thin films, which also generate electroluminescence, increases with the deposition flux and values as high as 0.15 cm(2) V(-1) s(-1) are obtained.
Giornale/Rivista: ADVANCED FUNCTIONAL MATERIALS
Volume: 15 (3) Da Pagina: 375 A: 380
Parole chiavi: ELECTRICAL CHARACTERISTICS; PENTACENE; GROWTH; TRANSPORT; CRYSTALS; POLYMERDOI: 10.1002/adfm.200400278Citazioni: 114dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2025-05-18Riferimenti tratti da Isi Web of Knowledge: (solo abbonati) Link per visualizzare la scheda su IsiWeb: Clicca quiLink per visualizzare la citazioni su IsiWeb: Clicca qui
