Assessment of NSOM resolution on III-V semiconductor thin films

Anno: 1998

Autori: Labardi M., Gucciardi P.G., Allegrini M., Pelosi C.

Affiliazione autori: Univ Pisa, Ist Nazl Fis Mat, Dipartimento Fis, I-56126 Pisa, Italy; Scuola Normale Super Pisa, I-56126 Pisa, Italy; Univ Messina, Dipartimento Fis Mat & Tecnol Fis Avanzate, I-98166 Messina, Italy; CNR, MASPEC, I-43100 Parma, Italy

Abstract: Emission-mode aperture near-field scanning optical microscopy (NSOM) is applied to semiconductor thin films for resolution assessment and artifact investigation purposes. We have used GaAs thin films deposited on GaP(111) substrates with A and B polarities by metal organic vapour phase epitaxy (MOVPE). Optical discrimination of GaAs islands on GaP(111) has been accomplished with a lateral resolution better than 20 nm (lambda/35) in the transmission mode. These samples have proven valuable for inspection of contrast mechanisms, based on discrimination of materials having different refractive index and absorption coefficients, as well as investigation of topography and shadowing artifacts in optical near-field imaging.

Giornale/Rivista: APPLIED PHYSICS. A, MATERIALS SCIENCE & PROCESSING (PRINT)

Volume: 66      Da Pagina: S397  A: S402

Maggiori informazioni: Presentatoa a: 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques
HAMBURG, GERMANY – JUL 20-25, 1997
Parole chiavi: field optical microscopy; raman-scattering; force microscopy; shear-force; reflection
DOI: 10.1007/s003390051171

Citazioni: 15
dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2025-05-18
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