3.6-MHz linewidth 1.55-mu m monomode vertical-cavity surface-emitting laser

Anno: 2001

Autori: Signoret P., Marin F., Viciani S., Belleville G., Myara M., Tourrenc J.P., Orsal B., Plais A.,
Gaborit F., Jacquet J.

Affiliazione autori: CEM2, Université Montpellier II, 34095 Montpellier Cedex 5, France;
Dip. Di Fisica, Università di Firenze, LENS, INFM, Unita di Firenze, 50125 Firenze, Italy;
Alcatel Corporate Research Centre, Opto +, Groupement d’Intérêt Economique, 91460 Marcoussis, France.

Abstract: We report on high-resolution linewidth measurement of proton-implanted bottom-emitting InGaAsP long-wavelength vertical-cavity surface-emitting lasers (VCSELs) employing
the heterodyne method. Devices with 35micron active diameter exhibit record linewidths of 3.6 MHz and negligible extrapolated linewidth for infinite power, at room temperature. This result relies on the long-cavity-designed VCSEL. The linewidth enhancement factor is also determined.

Giornale/Rivista: IEEE PHOTONICS TECHNOLOGY LETTERS

Volume: 13 (4)      Da Pagina: 269  A: 271

Maggiori informazioni: HPRN-CT-2000-00034. COST. – Manuscript received August 16, 2000; revised November 13, 2000. This work was supported by the European IST TUNVIC Project. The work of F. Marin was supported by an INFM PAIS Project and the European Contract HPRN-CT-2000-00034 (VISTA). This work is also the result of a cooperation in the frame of the European COST 268 Project.
Parole chiavi: Heterodyne; Monomode; Electric currents; Heterodyning; Laser modes; Semiconducting indium gallium arsenide; Semiconductor quantum wells; Spectrum analysis, Linewidth; Vertical-cavity surface-emitting lasers (VCSEL), Semiconductor lasers
DOI: 10.1109/68.917821

Citazioni: 24
dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2025-05-18
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