Experimental study of a broad area vertical-cavity semiconductor optical amplifier
Anno: 2004
Autori: Marino F., Balle S.
Affiliazione autori: Dept. de Fís. Interdisc., Inst. Mediter. de Estudios, Avanzados (CSIC-UIB), E-07190 Esporles, C. Miquel Marqués 21, Spain; Inst. Non Lineaire Nice, F-06560 Valbonne, 1361 Rte. des Lucioles, France
Abstract: An experimental study of a broad-area vertical-cavity semiconductor optical amplifier in the 980 nm wavelength range is reported. We show that the gain and the saturation power in such a device increase as the transverse dimension of the injected beam is increased. A gain of 16.3 dB with 0.8 nm optical bandwidth and saturation power of 1.4 mW has been obtained. The polarization sensitivity of the device is also studied. We show that birefringence in the cavity affects the polarization insensitivity expected in ideal devices as a consequence of the circular symmetry of the cavity. A brief study of the wavelength dependence of the output transverse profile is also reported. (C) 2003 Elsevier B.V. All rights reserved.
Giornale/Rivista: OPTICS COMMUNICATIONS
Volume: 231 (1-6) Da Pagina: 325 A: 330
Maggiori informazioni: We acknowledge financial support from MCYT (Spain) through project TIC2002-04255 and from the EU through project VISTA, HPRN-CT-2000-00034. SB acknowledges financial support from MEC (Spain) through the sabbatical grant PR2002-0329. We thank ULM University for providing us the VCSEL in the framework of the project VISTA.Parole chiavi: semiconductor optical amplifiersDOI: 10.1016/j.optcom.2003.11.067Citazioni: 7dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2025-05-18Riferimenti tratti da Isi Web of Knowledge: (solo abbonati)
