Comparison among various Si3N4 waveguide geometries grown within a CMOS fabrication pilot line

Anno: 2004

Autori: Daldosso N., Melchiorri M., Riboli F., Girardini M., Pucker G., Crivellari M., Bellutti P., Lui A., Pavesi L.

Affiliazione autori: Univ Trent, Dipartimento Fis, I-38050 Trento, Italy; Ist Ric Sci & Tecnol, ITC, Microsyst Div, I-38050 Trento, Italy.

Abstract: Low-pressure chemical-vapor deposition (LPCVD) thin-film Si3N4 waveguides have been fabricated on Si substrate within a complementary metal-oxide-semiconductor (CMOS) fabrication pilot line. Three kinds of geometries (channel, rib, and strip-loaded) have been simulated, fabricated, and optically characterized in order to optimize waveguide performances. The number and optical confinement factors of guided optical modes have been simulated, taking into account sidewall effects caused by the etching processes, which have been studied by scanning electron microscopy. Optical guided modes have been observed with a mode analyzer and compared with simulation expectations to confirm the process parameters. Propagation loss measurements at 780 and 632.8 nm have been performed by both using the cutback technique and measuring the drop of intensity of the top scattered light along the length of the waveguide. Loss coefficients of approximately 0.1 dB/cm have been obtained for channel waveguides. These data are very promising in view of the development of Si-integrated photonics.

Giornale/Rivista: JOURNAL OF LIGHTWAVE TECHNOLOGY

Volume: 22 (7)      Da Pagina: 1734  A: 1740

Maggiori informazioni: This work was supported by PAT (Provincia Autonoma di Trento) through the PROFILL (process for electro-optic devices based on infill of Si microcavities) project.
Parole chiavi: complementary metal-oxide-semiconductor (CMOS)-compatible technology; optical mode analysis; optical propagation losses; silicon nitride; silicon-integrated photonics; waveguides
DOI: 10.1109/JLT.2004.831182

Citazioni: 115
dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2025-06-29
Riferimenti tratti da Isi Web of Knowledge: (solo abbonati)