Optical gain in monodispersed silicon nanocrystals

Anno: 2004

Autori: Cazzanelli M., Navarro-Urrius D., Riboli F., Daldosso N., Pavesi L., Heitmann J., Yi L.X., Scholz R., Zacharias M., Gtzsele U.

Affiliazione autori: Univ Trent, Dipartimento Fis, INFM, I-38050 Trento, Italy; Max Planck Inst, Inst Microstruct Phys, D-06120 Halle An Der Saale, Germany.

Abstract: Stimulated emission from silicon-nanocrystal planar waveguides grown via phase separation and thermal crystallization of SiO/SiO2 superlattices is presented. Under high power pulsed excitation, positive optical gain can be observed once a good optical confinement in the waveguide is achieved and the silicon nanocrystals have proper size. A critical tradeoff between Auger nonradiative recombination processes and stimulated emission is observed. The measured large gain values are explained by the small size dispersion in these silicon nanocrystals. (C) 2004 American Institute of Physics.

Giornale/Rivista: JOURNAL OF APPLIED PHYSICS

Volume: 96 (6)      Da Pagina: 3164  A: 3171

Maggiori informazioni: This work has been supported by the INFM advanced research project RAMSES, by CE through the SINERGIA project, and by the DFG (Za191/13-1). The valuable collaboration of Dr. L. Dal Negro (now at MIT, Boston, USA) on the physics of gain in and the reading of Dr. W. J. Weber is gratefully acknowledged.
Parole chiavi: Stimulated-emission; Ion-implantation; Wave-guide; Mode Loss; Layer; Photoluminescence; Birefringence; Dynamics; Rings
DOI: 10.1063/1.1781770

Citazioni: 72
dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2025-05-18
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