Torus breakdown in a two-stroke relaxation memristor
Anno: 2021
Autori: Ginoux JM., Meucci R., Euzzor S., Di Garbo A.
Affiliazione autori: Aix Marseille Univ, Univ Toulon, CPT, CNRS, Marseille, France; CNR, Ist Nazl Ottica, Largo E Fermi 6, I-50125 Florence, Italy; CNR, Ist Biofis, Via G Moruzzi 1, I-56124 Pisa, Italy.
Abstract: Experimental study of a two stroke relaxation oscillator (TSO) has enabled to show that this electronic component has the same features as the so-called memristor. So, we have used the memristor’s direct current (DC) v(M) – i(M) characteristic for modeling the TSO’s DC current-voltage characteristic. This led us to confirm on one hand, that the TSO is a memristor and, on the other hand to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown. (C) 2021 Elsevier Ltd. All rights reserved.
Giornale/Rivista: CHAOS SOLITONS & FRACTALS
Volume: 153 Da Pagina: 111594-1 A: 111594-10
Parole chiavi: Two stroke oscillator; Memristor; Uni junction transistor; Torus breakdown; Relaxation and chaotic oscillatorsDOI: 10.1016/j.chaos.2021.111594Citazioni: 7dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2025-06-29Riferimenti tratti da Isi Web of Knowledge: (solo abbonati) Link per visualizzare la scheda su IsiWeb: Clicca quiLink per visualizzare la citazioni su IsiWeb: Clicca qui