Investigation of the mode structure of InAsSb/InAsSbP lasers with respect to spectroscopic applications

Anno: 1996

Autori: Popov A., Scheumann B., Mücke R., Baranov A., Sherstnev V., Yakovlev Y., Werle P.

Affiliazione autori: Ioffe Physico Technical Institute, 194021 St. Petersburg, Russian Federation; Fraunhofer Institut IFU, Kreuzeckbahnstr. 19, 82467 Garmisch-Partenkirchen, Germany

Abstract: New InAsSb diode lasers in the 3.4 µm spectral region were tested for their suitability for trace gas analysis. Selected lasers have shown single-frequency lasing over a large range of current and temperature and a cw optical power of 2 mW/facet at 82 K. The operating temperature range was 77-105 K under driving currents of 30 to 250 mA. The tuning characteristics of the investigated lasers were about 1 GHz/mA and 1.3cm-1/K.

Giornale/Rivista: INFRARED PHYSICS & TECHNOLOGY

Volume: 37 (1)      Da Pagina: 117  A: 121

Parole chiavi: Absorption spectroscopy; Heterojunctions; Laser tuning; Liquid phase epitaxy; Refractive index; Semiconducting indium compounds; Substrates; Trace analysis, Lattice mismatches; Trace gas analysis; Trace gas monitoring; Tunable diode laser absorption spectroscopy, Semiconductor lasers
DOI: 10.1016/1350-4495(95)00101-8

Citazioni: 5
dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2025-05-18
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