Quantum interferometry with three-dimensional geometry

Year: 2012

Authors: Spagnolo N., Aparo L., Vitelli C., Crespi A., Ramponi R., Osellame R., Mataloni P., Sciarrino F.

Autors Affiliation: Dipartimento di Fisica, Sapienza Universita` di Roma, Piazzale Aldo Moro 5, I-00185 Roma, Italy;
Center of Life NanoScience @La Sapienza, Istituto Italiano di Tecnologia, Viale Regina Elena, 255, I-00185 Roma, Italy;
Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche (IFN-CNR), Piazza Leonardo da Vinci 32, I-20133 Milano, Italy;
Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy;
Istituto Nazionale di Ottica (INO-CNR), Largo E. Fermi 6, I-50125 Firenze, Italy

Abstract: Quantum interferometry uses quantum resources to improve phase estimation with respect to classical methods. Here we propose and theoretically investigate a new quantum interferometric scheme based on three-dimensional waveguide devices. These can be implemented by femtosecond laser waveguide writing, recently adopted for quantum applications. In particular, multiarm interferometers include “tritter” and “quarter” as basic elements, corresponding to the generalization of a beam splitter to a 3- and 4-port splitter, respectively. By injecting Fock states in the input ports of such interferometers, fringe patterns characterized by nonclassical visibilities are expected. This enables outperforming the quantum Fisher information obtained with classical fields in phase estimation. We also discuss the possibility of achieving the simultaneous estimation of more than one optical phase. This approach is expected to open new perspectives to quantum enhanced sensing and metrology performed in integrated photonics.

Journal/Review: SCIENTIFIC REPORTS

Volume: 2      Pages from: 862-1  to: 862-6

More Information: This work was supported by FIRB-Futuro in Ricerca HYTEQ, ERC-Starting Grant 3D-QUEST.
KeyWords: Cadmium stannate, Transparent conducting oxide, Sheet resistance, Transmittance, Amorphous semiconductor, Ilmenite
DOI: 10.1038/srep00862

Citations: 71
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