Deep level traps in Se-doped MOCVD AlxGa1-xAs
Anno: 1987
Autori: HANNA M.C., OH E.G., SZMYD D.M., LUCCHESINI A., MAJERFELD A.
Affiliazione autori: University of Colorado at Boulder, Boulder, CO USA
Giornale/Rivista: JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
Parole chiavi: impurity and defect levels; III-V semiconductors;