Trapping properties and model for the deep-level center in Se-Doped AlxGa1-xAs

Anno: 1988

Autori: OH E.G., HANNA M.C., LU Z.H., SZMYD D.M., LUCCHESINI A., MAJERFELD A.

Affiliazione autori: University of Colorado at Boulder, Boulder, CO, USA

Giornale/Rivista: JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS

Parole chiavi: surface states, band structure; electron density of states;