Resolution limitation in EBL optical grating fabrication on InGaAsP/InP substrate.

Anno: 1990

Autori: Gentili M., Lucchesini A., Grella L., Meneghini G., Scopa L.

Affiliazione autori: IESS-CNR Via Cineto Romano 42, 00156 Roma, Italy
CSELT, Via Reis Romali 274, 10136 Torino, Italy

Abstract: Monte Carlo (MC) simulation and experimental point exposure energy distribution on InP substrate are used to describe
the total energy response of 1st and 2nd order gratings for InP based solid state lasers. A good agreement between
theoretical calculations and experimental obtained data is achieved. The triple Gaussian approximation of the energy
density profiles is suggested by an analysis of computed primary electron energy spectra. Examples of both dry and wet etched
gratings in InP substrate and InGaAsP epitaxial layers, which fit with calculations are given.

http://www.sciencedirect.com/science/article/pii/016793179090135G

Giornale/Rivista: MICROELECTRONIC ENGINEERING

Volume: 11 (1-4)      Da Pagina: 379  A: 382

Maggiori informazioni: ISSN: 0167-9317
doi: 10.1016/0167-9317(90)90135-G
Parole chiavi: electron beam lithography; Monte Carlo; InGaAsP; laser diode;
DOI: 10.1016/0167-9317(90)90135-G

Citazioni: 18
dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2025-01-12
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