Demonstration of an electrostatic-shielded cantilever
Anno: 2006
Autori: Pingue P., Piazza V., Baschieri P., Ascoli C., Menozzi C., Alessandrini A., Facci P.
Affiliazione autori: NEST CNR-INFM and Scuola Normale Superiore, I-56100 Pisa, Italy;
IPCF and CNR, I-56100 Pisa, Italy;
S3-INFM-CNR—Via Campi 213/A, I-41100 Modena, Italy
Abstract: The fabrication and performances of cantilevered probes with reduced parasitic capacitance starting from a commercial Si3N4 cantilever chip is presented. Nanomachining and metal deposition induced by focused ion beam techniques were employed in order to modify the original insulating pyramidal tip and insert a conducting metallic tip. Two parallel metallic electrodes deposited on the original cantilever arms are employed for tip biasing and as ground plane in order to minimize the electrostatic force due to the capacitive interaction between cantilever and sample surface. Excitation spectra and force-to-distance characterization are shown with different electrode configurations. Applications of this scheme in electrostatic force microscopy, Kelvin probe microscopy and local anodic oxidation is discussed. (c) 2006 American Institute of Physics.
Giornale/Rivista: APPLIED PHYSICS LETTERS
Volume: 88 (4) Da Pagina: 043510-1 A: 043510-3
Parole chiavi: fDOI: 10.1063/1.2168247Citazioni: 14dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2024-04-28Riferimenti tratti da Isi Web of Knowledge: (solo abbonati) Link per visualizzare la scheda su IsiWeb: Clicca quiLink per visualizzare la citazioni su IsiWeb: Clicca qui