New thick silicon carbide detectors: Response to 14 MeV neutrons and comparison with single-crystal diamonds

Anno: 2019

Autori: Rebai M., Rigamonti D., Cancelli S., Croci G., Gorini G., Cippo EP., Putignano O., Tardocchi M., Altana C., Angelone M., Borghi G., Boscardin M., Ciampi C., Cirrone GAP., Fazzi A., Giove D., Labate L., Lanzalone G., La Via F., Loreti S., Muoio A., Ottanelli P., Pasquali G., Pillon M., Puglia SMR., Santangelo A., Trifiro A., Tudisco S.

Affiliazione autori: Ist Sci & Tecnol Plasmi Consiglio Nazl Ric, Milan, Italy;‎ INFN, Sez Milano Bicocca, Milan, Italy;‎ Univ Milano Bicocca, Dipartimento Fis G Occhialini, Milan, Italy;INFN, Lab Nazl Sud LNS, Via S Sofia 62, I-95123 Catania, Italy; Associaz EURATOM ENEA Fus ENEA CR Frascati, Via & Fermi 45, I-00044 Frascati, Roma, Italy; Fdn Bruno Kessler FBK Trento, TIFPA, INFN, Via Sommarive 14, I-38123 Povo, Italy; INFN, Sez Firenze, Via G Sansone 1, I-50019 Sesto Fiorentino, Italy; Univ Firenze, Dipartimento Fis, Via G Sansone, I-50019 Sesto Fiorentino, Italy; Politecn Milan, Dept Energy, Via Lambruschini 4, I-20156 Milan, Italy; INFN, Sez Milano, Via Celoria 16, I-20133 Milan, Italy; CNR, Ist Nazl Ott, Via G Moruzzi 1, I-56124 Pisa, Italy; Univ Enna Kore, Enna, Italy; CNR, Inst Microelect & Microsyst, 8 Str,5, I-95121 Catania, Italy; STMicroelect, Stradale Primosole 50, I-95121 Catania, Italy; Univ Messina, Dipartimento Sci MIFT, Vle F S DAlcontres 31, I-98166 Messina, Italy; INFN, Sez Catania, Via Santa Sofia64, I-6495123 Catania, Italy

Abstract: In this work we present the response of a new large volume 4H Silicon Carbide (SiC) detector to 14 MeV neutrons. The device has an active thickness of 100 mu m (obtained by epitaxial growing) and an active area of 25 mm(2). Tests were conducted at the ENEA-Frascati Neutron Generator facility by using 14.1 MeV neutrons. The SiC detector performance was compared to that of Single-Crystal Diamond (SCD) detectors. The SiC response function was successfully measured and revealed a very complex structure due to the presence in the detector of both Silicon and Carbon atoms. Nevertheless, the flexibility in the SiC manufacturing and the new achievements in terms of relatively large areas (up 1×1 cm(2)) and a wide range of thicknesses makes them an interesting alternative to diamond detectors in environments where limited space and high neutron fluxes are an issue, i.e. modern neutron cameras or in-vessel tokamak measurements for the new generation fusion machines such as ITER. The absence of instabilities during neutron irradiation and the capability to withstand high neutron fluences and to follow the neutron yield suggest a straightforward use of these detectors as a neutron diagnostics.


Volume: 946      Da Pagina: 162637-1  A: 162637-7

Maggiori informazioni: The work leading to this publication was funded by the INFN-Group 5 (Technology Research). The views and opinions expressed herein do not necessarily reflect those of INFN.
Parole chiavi: Single-Crystal Diamond; Silicon Carbide detector
DOI: 10.1016/j.nima.2019.162637

Citazioni: 22
dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2024-06-16
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