Electrical characteristics of heavily doped NTD Ge at very low temperatures

Anno: 2005

Autori: Barucci M., Beeman J., Olivieri E., Pasca E., Risegari L., Ventura G.

Affiliazione autori: INFN, Section of Florence, Florence, Italy; Department of Physics, University of Florence, Florence, Italy; Department of Mechanics, University of Florence, Florence, Italy; Lawrence Berkeley National Laboratory, University of California, Berkeley, United States

Abstract: We report about the measurement of the electric characteristics of some NTD Ge thermistors at temperatures down to 25 mK. The dopant concentration is around 6×1016cm-3, producing a material of characteristics close to the metal-to-insulator transition. Fitting the ?(T) characteristics with a variable exponent p Mott\’s law, a p around 0.6 was obtained. This result confirms the hypothesis of a dependence of p on the doping level.

Giornale/Rivista: PHYSICA B-CONDENSED MATTER

Volume: 368 (1-4)      Da Pagina: 139  A: 142

Parole chiavi: Dopant concentration; Electrical characteristics; Low temperature thermistors, Cryogenics; Materials science; Metal insulator transition; Semiconducting germanium; Semiconductor doping, Thermistors
DOI: 10.1016/j.physb.2005.07.008

Citazioni: 6
dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2024-06-23
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